FJAF6910TU Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FJAF6910TU Datasheet PDF : 5 Pages
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FJAF6910
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1700V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• High Switching Speed : tF(typ.) =0.15µs
• For Color Monitor
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP*
Collector Current (Pulse)
PC
Collector Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Rating
1700
800
6
10
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF*
Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=6A
IC=6A, IB=1.5A
IC=6A, IB=1.5A
VCC=200V, IC=6A, RL=33Ω
IB1=1.2A, IB2= - 2.4A
1700
800
6
10
7
1
mA
10
µA
1
mA
V
V
V
10
3
V
1.5
V
4
µs
0.3
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Typ
RθjC
Thermal Resistance, Junction to Case
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
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