DN100S Ver la hoja de datos (PDF) - AUK -> KODENSHI CORP
Número de pieza
componentes Descripción
Fabricante
DN100S Datasheet PDF : 3 Pages
| |||
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
T stg
Ratings
15
12
5
1
200
150
-55~150
DN100S
(Ta=25° C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
C ob
Test Condition
IC=50µA, IE=0
IC=1mA, IB =0
IE=50µA, IC=0
VCB=12V, IE=0
VEB =5V, IC=0
VCE=1V, IC =100mA
VCE=1V, IC =1A
IC=400mA, IB =20mA
IC=400mA, IB =20mA
VCE=5V, IC =50mA
VCB=10V, IE=0, f=1MHz
Min.
15
12
5
-
-
200
70
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
260
5
(Ta=25° C)
Max. Unit
-
V
-
V
-
V
0.1
µA
0.1
µA
450
-
-
-
0.25
V
1.2
V
-
MHz
-
pF
KST-2117-000
2
Share Link: 