DIM200WLS12-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM200WLS12-A000 Datasheet PDF : 8 Pages
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DIM200WLS12-A000
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 10V
50
VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
45
Tc = 125˚C,
Vcc = 600V,
40 Rg = 4.7 Ohms
35
30
25
20
15
10
5
Eon
Eoff
Erec
0
0
50
100
150
200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
400
Common emitter
Tcase = 125˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 10V
50
VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
55
Tc = 125˚C,
50
Vcc = 600V,
IC = 200A
45
40
35
30
25
20
15
10
5
Eon
Eoff
0
Erec
4
6
8
10
12
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
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