CEP9060R Ver la hoja de datos (PDF) - Chino-Excel Technology
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CEP9060R Datasheet PDF : 4 Pages
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CEP9060R/CEB9060R
CEF9060R
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
4
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
VGS = 0V, ID = 250µA
55
IDSS
VDS = 55V, VGS = 0V
IGSSF
VGS = 20V, VDS = 0V
IGSSR
VGS = -20V, VDS = 0V
V
25
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
2
VGS = 10V, ID = 62A
4
V
8.8 10.5 mΩ
Forwand Transconductance
Dynamic Characteristics c
gFS
VDS = 25V, ID = 62A
30
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
2690
798
pF
pF
Crss
113
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 28V, ID = 62A,
VGS = 10V, RGEN = 4.5Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 44V, ID = 62A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
37
75
ns
18
45
ns
67 120 ns
16
40
ns
60
80
nC
16
nC
21
nC
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 62A
62
A
1.3
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, IAS = 50A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
4 - 183
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