CCS050M12CM2 Ver la hoja de datos (PDF) - Cree, Inc

Número de pieza

componentes Descripción

Fabricante

CCS050M12CM2

1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module

Cree, Inc 

Free-Wheeling SiC Schottky Diode Characteristics

Symbol

Parameter

Min.

VSD

Diode Forward Voltage

QC

Total Capacitive Charge

tRR

Reverse Recovery Time

ERR

Reverse Recovery Energy

C

Total Capacitance

IF

Continuous Forward Current

Thermal Characteristics

Symbol

Parameter

Typ.

1.6

2.2

280

TBD

TBD

3.42

0.23

0.18

50

Max. Unit

Test Conditions

1.85

V

IF = 50A, VGS = 0

IF = 50A, TJ = 150ºC

μC

ns

IF = 25A, VR = 1000V

diF/dt = 500 A/μs, TJ = 25ºC

mJ

VR=0V, f = 1MHz, TJ = 25ºC

nF VR=400V, f = 1MHz, TJ = 25ºC

VR=800V, f = 1MHz, TJ = 25ºC

A

VGS = -5V, Tcase = 100ºC

Min. Typ. Max. Unit

Test Conditions

RthJCM

RthJCD

Thermal Resistance Juction-to-Case for MOSFET

Thermal Resistance Juction-to-Case for Diode

0.37

0.42

0.49

0.48

˚C/W

Note

Note

3

CCS050M12CM2,Rev. -

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