BT236-D Ver la hoja de datos (PDF) - SemiWell Semiconductor
Número de pieza
componentes Descripción
Fabricante
BT236-D Datasheet PDF : 5 Pages
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BT236-D
Electrical Characteristics
Symbol
Items
IDRM
VTM
I+GT1
I
-
GT1
I
-
GT3
I+GT3
V+GT1
V-GT1
V-GT3
V+GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Rth(j-a)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Gate Trigger Current
Ⅲ
Ⅳ
Ⅰ
Ⅱ
Gate Trigger Voltage
Ⅲ
Ⅳ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 8 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -0.5 A/ms,
VD=2/3 VDRM
Junction to case
Junction to Ambient
Ratings
Unit
Min. Typ. Max.
─
─
1.0
mA
─
─
1.6
V
─
─
5
─
─
5
mA
─
─
5
─
8
12
─
─
1.4
─
─
1.4
V
─
─
1.4
─
1.6
2.0
0.2
─
─
V
5
─
─ V/㎲
─
─
10
mA
─
─
2.8 °C/W
─
─
60 °C/W
※ Notes :
1. Pulse Width ≤ 300us , Duty cycle ≤ 2%
2/5
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