BD9890F Ver la hoja de datos (PDF) - ROHM Semiconductor
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BD9890F Datasheet PDF : 5 Pages
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〇NOTE FOR USE
１. When designing the external circuit, including adequate margins for variation between external devices
and IC. Use adequate margins for steady state and transient characteristics.
２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is
within recommended operating range. The standard electrical characteristic values cannot be guaranteed
at other voltages in the operating ranges, however the variation will be small.
３. Mounting failures, such as misdirection or miscounts, may harm the device.
４. A strong electromagnetic field may cause the IC to malfunction.
５. The GND pin should be the location within ±0.3V compared with the PGND pin.
６. BD9890F and BD9890FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown
circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not
designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed.
７. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become
significantly shortened. Moreover, the exact failure mode caused by short or open is not defined. Physical
countermeasures, such as a fuse, need to be considered when using a device beyond its maximum ratings.
８. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage
is switching. Make sure to leave adequate margin for this IC variation.
９. On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch.
１０. By STB voltage, BD9890F and BD9890FV are changed to 2 states. Therefore, do not input STB pin voltage
between one state and the other state (0.8～1.6).
１１. The pin connected a connector need to connect to the resistor for electrical surge destruction.
This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins.
A P-N junction is formed from this P layer of each pin. For example, the relation between each potential
is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can
result in mutual interference among circuits as well as operation faults and physical damage. Accordingly
you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than
the GND (P substrate) voltage to an input pin.
１２．This IC is a monolithic IC which (as shown is Fig-1)has P+ substrate and between the various pins. A
P-N junction is formed from this P layer of each pin. For example, the relation between each potential
is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can
result in mutual interference among circuits as well as operation faults and physical damage. Accordingly
you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than
the GND (P substrate) voltage to an input pin.
Resistance
(PinA)
P＋
Ｎ
P
P＋
N
P substrate
GND
Parasitic diode
Transistor (NPN)
(PinB)
B
CＣ
E
N
GND
N
N
Ｎ
P substrate
GND
Parasitic diode
(PinB)
(PinA)
Parasitic diode
B
C
Ｂ
Ｃ
EＥ
GND
GND
Other adjacent components Parasitic diode
Fig-1 Simplified structure of a Bipolar IC
REV. A
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