APM4550K Ver la hoja de datos (PDF) - Anpec Electronics
Número de pieza
componentes Descripción
Fabricante
APM4550K Datasheet PDF : 14 Pages
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APM4550K
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID* Continuous Drain Current
IDM* 300µs Pulsed Drain Current
VGS=±10V
IS* Diode Continuous Forward Current
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
PD* Power Dissipation
TA=25°C
TA=100°C
RθJA* Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
Rating
Unit
N Channel P Channel
30
-30
V
±20
±20
7
-5
A
30
-20
2.5
-2
A
150
°C
-55 to 150
2
W
0.8
62.5
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source On-State
Resistance
Test Conditions
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=7A
VGS=-10V, IDS=-5A
VGS=4.5V, IDS=5A
VGS=-4.5V, IDS=-4A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM4550
Unit
Min. Typ. Max.
30
-
-30
-
-
V
-
-
-
1
-
-
30
µA
-
-
-1
-
-
-30
1 1.5 2
V
-1 -1.5 -2
-
- ±100
nA
-
- ±100
-
20 27.5
-
40 50
mΩ
-
30 40
-
62 80
Copyright © ANPEC Electronics Corp.
2
Rev. A.2 - Feb., 2009
www.anpec.com.tw
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