7WB383 Ver la hoja de datos (PDF) - ON Semiconductor
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7WB383 Datasheet PDF : 12 Pages
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7WB383
DC ELECTRICAL CHARACTERISTICS
Symbol
VIK
VIH
VIL
VOH
IIN
IOFF
ICC
Parameter
Clamp Diode Voltage
High−Level Input Voltage
(Control)
Low−Level Input Voltage
(Control)
Output Voltage High
Input Leakage Current
Power Off Leakage Current
Quiescent Supply Current
DICC
Increase in Supply Current
(Control Pin)
RON
Switch ON Resistance
Conditions
II/O = −18 mA
See Figure 4
0 v VIN v 5.5 V
VI/O = 0 to 5.5 V
IO = 0,
VIN = VCC or 0 V
One input at 3.4 V;
Other inputs at
VCC or GND
VI/O = 0,
II/O = 64 mA
II/O = 30 mA
VI/O = 2.4,
II/O = 15 mA
VI/O = 2.4,
II/O = 15 mA
VCC
(V)
4.5
4.0 to
5.5
4.0 to
5.5
5.5
0
5.5
5.5
4.5
4.0
TA = 255C
Min Typ Max
−1.2
2.0
0.8
$0.1
$0.1
$0.1
3
7
3
7
6
15
10
20
TA =
−555C to +1255C
Min
Max
−1.2
2.0
0.8
$1.0
$1.0
$1.0
2.5
7
7
15
20
Unit
V
V
V
mA
mA
mA
mA
W
AC ELECTRICAL CHARACTERISTICS
Symbol
tPD
Parameter
Propagation Delay, Bus to Bus
Test Condition
See Figure 5
TA =
VCC
TA = 25 5C
−555C to +1255C
(V)
Min Typ Max
Min
Max
Unit
4.0 to
5.5
0.25
0.25
ns
tPD−EX Propagation Delay, EX to Bus
See Figure 5 and
Figure 6
4.0 to
5.5
4.5
4.5
ns
tEN
Output Enable Time
See Figure 5
4.5 to 0.8 2.5 4.2
0.8
4.2
ns
5.5
4.0
0.8 3.0
4.6
0.8
4.6
tDIS
Output Disable Time
4.5 to 0.8 3.0 4.8
0.8
4.8
ns
5.5
4.0
0.8 2.9
4.4
0.8
4.4
CIN
Control Input Capacitance
VIN = 5 or 0 V
5.0
2.5
pF
CIO(ON) Switch On Capacitance
Switch ON
5.0
10
pF
CIO(OFF) Switch Off Capacitance
Switch OFF
5.0
5
pF
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