5STP07D1800 Ver la hoja de datos (PDF) - ABB
Número de pieza
componentes Descripción
Fabricante
5STP07D1800 Datasheet PDF : 5 Pages
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On-state
ITAVM Max. average on-state current
ITRMS Max. RMS on-state current
ITSM Max. peak non-repetitive
surge current
I2t
Limiting load integral
VT On-state voltage
VT0 Threshold voltage
rT
Slope resistance
IH
Holding current
IL
Latching current
5STP 07D1800
730 A
1150 A
Half sine wave, TC = 70°C
9000 A
9500 A
tp =
tp =
10 ms Tj = 125°C
8.3 ms After surge:
405 kA2s tp =
374 kA2s tp =
10 ms
8.3 ms
VD = VR = 0V
1.60 V IT =
1500 A
0.80 V IT = 500 - 1500 A
0.540 mΩ
Tj = 125°C
20-70 mA
10-50 mA
80-500 mA
50-200 mA
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Switching
di/dtcrit Critical rate of rise of on-state
current
td
Delay time
≤
tq
Turn-off time
≤
Qrr Recovery charge
min
max
150 A/µs
300 A/µs
Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
60 sec.
f = 50Hz
ITRM = 1500 A
IFG = 2 A, tr = 0.5 µs
3.0 µs
400 µs
VD = 0.4⋅VDRM IFG = 2 A, tr = 0.5 µs
VD ≤ 0.67⋅VDRM ITRM = 1500 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs
800 µAs
1500 µAs
Triggering
VGT
IGT
VGD
IGD
VFGM
IFGM
VRGM
PG
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Gate power loss
2.6 V
400 mA
0.3 V
10 mA
12 V
10 A
10 V
3W
Tj = 25°
Tj = 25°
VD =0.4 x VDRM
VD = 0.4 x VDRM
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1027-05 Sep. 01
page 2 of 5
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