5SMX12L2510 Ver la hoja de datos (PDF) - ABB

Número de pieza

componentes Descripción

Fabricante

5SMX12L2510

IGBT-Die

ABB 

5SMX 12L2510

Mechanical properties

Parameter

Overall die L x W

12.4 x 12.4

Dimensions

exposed L x W (except gate pad)

front metal

gate pad L x W

10.11 x 10.13

1.46 x 1.61

Metallization 3)

thickness

front (E)

back (C)

AlSi1

AlSi1 + TiNiAg

305 ± 20

4

1.8 + 1.2

3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.

Unit

mm

mm

mm

µm

µm

µm

Outline drawing

G

Emitter

Note: all dimensions are shown in mm

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.

This product has been designed and qualified for Industrial Level.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1622-03 Sep 05

page 3 of 5

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