2SK2315TYTL-E Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK2315TYTL-E Datasheet PDF : 6 Pages
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2SK2315
Static Drain to Source on State Resistance
vs. Temperature
1.0
0.8
ID = 2 A
0.6
VGS = 3 V
0.5 A
1A
0.4
1A
0.5 A
0.2
VGS = 10 V ID = 2 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
10
VGS = 0
f = 1 MHz
1
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
200
100
td(off)
50
tf
20
10
tr
td(on)
5
VGS = 10 V, PW = 2 µs
2
VDD = 30 V, duty < 1 %
0.05 0.1 0.2 0.5 1 2
5
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25°C
25°C
2
75°C
1
0.5
VDS = 10 V
0.2
Pulse Test
0.1
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
100 Dynamic Input Characteristics 20
VGS
80
VDD = 50 V
25 V
16
10 V
60
VDS
40
12
ID = 2 A 8
20
VDD = 50 V
4
25 V
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
4
3
10 V
2
5V
VGS = 0
1
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Rev.2.00 Sep. 07, 2005 page 4 of 5
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