2SJ610(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SJ610 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
5
Common source
VGS = -10 V
Pulse test
4
-2 A
3
ID = -1 A
2
1
0
-80
-40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
1000
Ciss
Coss
100
Crss
10
CVGomSmo=n0sVource
f = 1 MHz
Tc = 25°C
1
-0.1 -0.3
-1
-3
-10
-30
Drain-source voltage VDS (V)
-100
2SJ610
-100
Common source
Tc = 25°C
Pulse test
IDR – VDS
-10
-1
VGS = -10 V
-5 V -3 V
0, 1
0.1
0
0 2 0.4 0.6 0.8 1.0 1 2 1.4
Drain-source voltage VDS (V)
Vth – Tc
-5
CVIDDom=Sm-o1=n-ms1Ao0uVrce
-4
Pulse test
-3
-2
-1
0
-80
-40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
-300
-30
Common source
ID = -2 A
-25
Tc = 25°C
-200 VDS
Pulse test
-20
-100
0
0
-15
-50
VGS
VDD = -200 V -10
-100
-5
-0
5
15
25
35
Total gate charge Qg (nC)
4
2002-09-11
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