2SJ610(2002) Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

2SJ610
(Rev.:2002)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)

Toshiba 

ID – VDS

-2 Common source

Tc = 25°C, Pulse test

-1 5

-10-8 -6

-15

-5

-5.5 -4.5

-1

VGS = -4 V

-0 5

0

0

-1

-2

-3

-4

Drain-source voltage VDS (V)

2SJ610

ID – VDS

-4 Common source

Tc = 25°C, Pulse test

-6

-5 5

-15

-8

-3

-10

-5

-2

-4 5

-1

VGS = -4 V

0

0

-5

-10

-15

-20

Drain-source voltage VDS (V)

-4

Common source

VDS = -10 V

Pulse test

-3

ID – VGS

-2

25

-1

100

Tc = -55°C

0

0

-1

-2

-3

-4

-5

-6

Gate-source voltage VGS (V)

-10

-8

-6

-4

-2

0

0

VDS – VGS

Common source

Tc = 25°C

Pulse test

-2

ID = -1 A

-2

-4

-6

-8

-10

Gate-source voltage VGS (V)

10

Common source

VDS = -10 V

5 Pulse test

ïYfsï – ID

3

Tc = -55°C

25

100

1

05

03

0.1

-0.1

-0.3 -0 5

-1

-3 -5

-10

Drain current ID (A)

10

Common source

Tc = 25°C

5 VGS = 10 V

Pulse test

3

RDS (ON) - ID

1

05

03

0.1

-0 01 -0.03 -0.1 -0.3

-1

-3

-10

Drain current ID (A)

3

2002-09-11

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