2SJ610(2002) Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

2SJ610
(Rev.:2002)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)

Toshiba 

2SJ610

3

1

Duty = 0.5

0.5

0.3 0 2

0.1

0.1

0.05

0.05 0 02

0.03 0 01

Single pulse

0.01

0 005

0 003

0 001

10 m

100 m

1m

rth – tw

10 m

100 m

Pulse width tw (S)

PDM

t

T

Duty = t/T

Rth (ch-c) = 6.25°C/W

1

10

100

Safe operating area

-100

-50

-30

-10

-5 ID max (pulsed) *

-3

1 ms *

-1

DC

-0 5

-0 3

100 ms *

-0.1

* Single nonrepetitive pulse

-0 0

Tc = 25°C

-0 0 Curves must be derated linearly

with increase in temperature.

-0 0

1

3 5 10

30

VDSS max

50 100

300 500 1000

Drain-source voltage VDS (V)

EAS – Tch

200

160

120

80

40

0

25

50

75

100

125

150

Channel temperature (initial) Tch (°C)

15 V

-15 V

Test circuit

RG = 25 W

VDD = -50 V, L = 75 mH

BVDSS

IAR

VDD

VDS

Wave form

5

2002-09-11

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