2SD667 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SD667 Datasheet PDF : 6 Pages
| |||
2SD667, 2SD667A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
2SD667
2SD667A
Unit
120
120
V
80
100
V
5
5
V
1
1
A
2
2
A
0.9
0.9
W
150
150
°C
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD667
2SD667A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 120 —
—
120 —
—V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 80
—
—
100 —
—V
IC = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
— —5
— —V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1*1
hFE2
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
Cob
capacitance
——
60 —
10 —
320 60
30 — — 30
—— 1 —
— — 1.5 —
— 140 — —
— 12 — —
— 10 µA VCB = 100 V, IE = 0
— 200
VCE = 5 V,
IC = 150 mA*2
——
VCE = 5 V,
IC = 500 mA*2
—1
V
IC = 500 mA,
IB = 50 mA*2
— 1.5 V
VCE = 5 V,
IC = 150 mA*2
140 —
MHz VCE = 5 V,
IC = 150 mA*2
12 — pF VCB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SD667
60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200
2
Share Link: 