D1710C Ver la hoja de datos (PDF) - SANYO -> Panasonic

Número de pieza

componentes Descripción

Fabricante

D1710C

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

2SD1710C

Continued from preceding page.

Parameter

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

Symbol

Conditions

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEX(sus)

ton

tstg

tf

VCE=5V, IC=0.6A

VCE=5V, IC=3A

VCE=10V, IC=0.6A

VCB=10V, f=1MHz

IC=3A, IB=0.6A

IC=3A, IB=0.6A

IC=1mA, IE=0A

IC=5mA, RBE=∞

IE=1mA, IC=0A

IC=2.5A, IB1=--IB2=1A, L=1mH, Clamped

VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω

VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω

VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω

min

20

8

Ratings

typ

18

80

900

500

7

500

max

50

1

1.5

0.5

3.0

0.3

Unit

MHz

pF

V

V

V

V

V

V

μs

μs

μs

Package Dimensions

unit : mm (typ)

7502-002

16.0

3.4

5.6

3.1

2.8

2.0

2.0

1.0

0.6

Switching Time Test Circuit

IB1

PW=20μs

D.C.≤1%

IB2

INPUT

VR

RB

50Ω

+

100μF

VBE= --5V

OUTPUT

RL=50Ω

+

470μF

VCC=200V

123

5.45

5.45

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PML

IC -- VCE

8

1.2A

1.0A

6

800mA

600mA

4

400mA

200mA

2

100mA

50mA

20mA

IB=0mA

0

0

2

4

6

8

10

Collector-to-Emitter Voltage, VCE -- V IT03804

IC -- VBE

8

VCE=5V

6

4

2

0

0

0.2

0.4

0.6

0.8

1.0

1.2

Base-to-Emitter Voltage, VBE -- V IT03805

No. 7200-2/4

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