C5814 Ver la hoja de datos (PDF) - Isahaya Electronics

Número de pieza

componentes Descripción

Fabricante

C5814

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

Isahaya Electronics 

DEVELOPING

〈Transistor〉

2SC5814，2SC5815，2SC5816，2SC5817

For Low Frequency Amplify Application

Silicon NPN Epitaxial Type

ELECTRICAL CHARACTERISTICS (Ta=25℃)

SYMBOL

PARAMETER

TEST CONDITIONS

V(BR)CEO

ICBO

IEBO

C to E break down voltage

Collector cut off current

Emitter cut off current

ｈＦＥ ＊ DC forward current gain

ｈＦＥ

DC forward current gain

VCE(sat)

C to E saturation voltage

fT

Gain band width product

Cob

Collector output capacitance

＊ It shows ｈＦＥ classification in right table.

I C=100uA，RBE=∞

VCB=60V，I E =0mA

VEB=4V，I C=0mA

VCE=6V，IC=1mA

VCE=6V，IC=0.1mA

IC=30mA，I B=1.5mA

VCE=6V，IE=-10mA

VCB=6V，IE=0mA，f=1MHz

Item

ｈＦＥ

Marking

Q

120〜270

EQ

LIMITS

MIN TYP MAX

60

0.5

0.5

120

560

70

0.3

200

1.5

UNIT

V

μA

μA

-

-

V

MHz

pF

R

180〜390

ER

S

270〜560

ES

Item

ｈＦＥ

Marking

E

150〜300

EE

F

250〜500

EF

ISAHAYA ELECTRONICS CORPORATION

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