C5814(2010) Ver la hoja de datos (PDF) - Isahaya Electronics
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C5814 Datasheet PDF : 2 Pages
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DESCRIPTION
2SC5814 is a super mini package silicon NPN epitaxial
type transistor.
It is designed for low frequency voltage application.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5814
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit：ｍｍ
FEATURE
●Low collector to emitter saturation voltage.
VCE(sat)=0.3V max(@IC=30mA, IB=1.5mA)
●Facilitates miniaturization and high-density mouting.
●Excellent linearity of DC forward current gain.
APPLICATION
For hybrid IC, small type machine low frequency voltage
amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
60
V
VEBO
Emitter to Base voltage
6
V
VCEO Collector to Emitter voltage
60
V
IO
Collector current
125
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
＋125
℃
Tstg
Storage temperature
-55～＋125 ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
JEITA：SC-59
JEDEC:similar to TO-236
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
MARKING
ＥＲ
TYPE NAME
ｈＦＥ ITEM
Parameter
Symbol
Test conditions
C to E break down voltage
V(BR)CEO I C=1uA ,R BE=∞
Collector cut off current
ICBO
V CB=60V, I E=0mA
Emitter cut off current
IEBO
V EB=4V, I C=0mA
DC forward current gain
hFE
V CE=6V, I C=1mA
※
DC forward current gain
hFE
V CE=6V, I C=0.1mA
C to E Saturation Vlotage
VCE(sat) I C=30mA ,IB=1.5mA
Gain bandwidth product
fT
V CE=6V, I E=-10mA
Collector output capacitance
Cob
V CB=6V, I E=0mA,f=1MHz
※ It shows ｈＦＥ classification in below table.
Limits
Unit
Min Typ Max
60
-
-
V
-
-
0.5 μA
-
-
0.5 μA
120
-
560
-
70
-
-
-
-
-
0.3
V
-
200
-
MHz
-
1.5
-
pF
Item
ｈＦＥ
Marking
Q
120～270
EQ
R
180～390
ER
S
180～390
ES
Item
ｈＦＥ
Marking
E
150～300
EE
F
250～500
EF
ISAHAYA ELECTRONICS CORPORATION
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