2SC5002 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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Fabricante

2SC5002

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2A

VBEsat Base-emitter saturation voltage

IC=5A;IB=1.2A

ICBO1

ICBO2

IEBO

Collector cut-off current

Collector cut-off current

Emitter cut-off current

VCB=1200V ;IE=0

VCB=1500V; IE=0

VEB=6V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=5A ; VCE=5V

fT

Transition frequency

IE=-0.5A ; VCE=12V

COB

Output capacitance

Switching times

VCB=10V;f=1MHz

tstg

Storage time

tf

Fall time

IC=4A;IB1=0.8A;

IB2=-1.6A;RL=50Ω

VCC=200V

Product Specification

2SC5002

MIN TYP. MAX UNIT

800

V

5

V

1.5

V

100 μA

1

mA

100 μA

8

4

9

4

MHz

100

pF

4.0

μs

0.2

μs

2

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