2SC3691 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC3691

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3691

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.5V(Max)@ IC= 4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V (Min)

·High Switching Speed

APPLICATIONS

·Designed for high speed and power switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

2.5

A

25

W

2

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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