16TTS16S Ver la hoja de datos (PDF) - Vishay Semiconductors
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16TTS16S Datasheet PDF : 7 Pages
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VS-16TTS16SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Soldering temperature
Maximum thermal resistance,
junction to case
TS
RthJC
For 10 s (1.6 mm from case)
DC operation
Typical thermal resistance,
junction to ambient
RthJA
PCB mount (1)
Approximate weight
Marking device
Case style D2PAK (SMD-220)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
VALUES
UNITS
- 40 to 125
°C
240
1.3
°C/W
40
2
g
0.07
oz.
16TTS16S
125
16TTS.. Series
120
R thJC (DC) = 1.3 °C/W
115
Conduction Angle
110
105
100
95
90
0
30°
60°
90°
120°
180°
2
4
6
8 10 12
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
18
180°
16
120°
90°
14
60°
12
30°
10 RMS Limit
8
Conduction Angle
6
4
16TTS.. Series
TJ = 125°C
2
0
0 1 2 3 4 5 6 7 8 9 10 11
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
125
16TTS.. Series
120
R thJC (DC) = 1.3 °C/W
115
Conduction Period
110
105
100
95
90
0
30° 60°
90°
120°
180° DC
2 4 6 8 10 12 14 16
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
25
DC
180°
20
120°
90°
60°
30°
15
RMS Limit
10
5
Conduction Period
16TTS.. Series
TJ = 125°C
0
0 2 4 6 8 10 12 14 16 18
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94590 For technical questions within your region, please contact one of the following:
Revision: 16-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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