SPI11N60S5 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
SPI11N60S5 Datasheet PDF : 12 Pages
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SPP11N60S5, SPB11N60S5
SPI11N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC
RthJA
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
62
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11A
- 700
breakdown voltage
-V
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th) ID=500µΑ, VGS=VDS 3.5
IDSS
VDS=600V, VGS=0V,
Tj=25°C,
-
Tj=150°C
-
4.5 5.5
µA
-
25
- 250
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=7A,
Tj=25°C
Tj=150°C
-
- 100 nA
Ω
- 0.34 0.38
- 0.92 -
Gate input resistance
RG
f=1MHz, open Drain
-
29
-
Rev. 2.1
Page 2
2004-03-30
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