SPI11N60S5 Ver la hoja de datos (PDF) - Infineon Technologies
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componentes Descripción
Fabricante
SPI11N60S5 Datasheet PDF : 12 Pages
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPP11N60S5, SPB11N60S5
SPI11N60S5
P-TO262
VDS
RDS(on)
ID
600 V
0.38 Ω
11 A
P-TO263-3-2
P-TO220-3-1
2
P-TO220-3-1
23
1
Type
SPP11N60S5
SPB11N60S5
SPI11N60S5
Package
P-TO220-3-1
P-TO263-3-2
P-TO262
Ordering Code
Q67040-S4198
Q67040-S4199
Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
11
7
22
340
0.6
11
±20
±30
125
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30
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