XP133A1235SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

Número de pieza

componentes Descripción

Fabricante

XP133A1235SR

Power MOSFET

TOREX SEMICONDUCTOR 

XP133A1235SR

■ELECTRICAL CHARACTERISTICS

DC Characteristics

PARAMETER

SYMBOL

CONDITIONS

Drain Cut-Off Current

Gate-Source Leak Current

Gate-Source Cut-Off Voltage

Idss

Igss

Vgs(off)

Drain-Source On-State Resistance * Rds(on)

Forward Transfer Admittance *

| Yfs |

Vds=20V, Vgs=0V

Vgs=±12V, Vds=0V

Id=1mA, Vds=10V

Id=3A, Vgs=4.5V

Id=3A, Vgs=2.5V

Id=4A, Vds=10V

Body Drain Diode

Forward Voltage

Vf

If=6A, Vgs=0V

* Effective during pulse test.

MIN.

-

-

0.5

-

-

-

TYP.

-

-

-

0.026

0.035

14

Ta = 25℃

MAX. UNITS

10

μA

±1

μA

1.2

V

0.035

Ω

0.048

Ω

-

S

-

0.85 1.1

V

Dynamic Characteristics

PARAMETER

Input Capacitance

Output Capacitance

Feedback Capacitance

SYMBOL

Ciss

Coss

Crss

CONDITIONS

Vds=10V, Vgs=0V

f=1MHz

MIN.

-

-

-

TYP.

760

430

200

Ta = 25℃

MAX. UNITS

-

pF

-

pF

-

pF

Switching Characteristics

PARAMETER

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

SYMBOL

td (on)

tr

td (off)

tf

CONDITIONS

Vgs=5V, Id=3A

Vdd=10V

MIN.

-

-

-

-

TYP.

10

20

55

15

Ta = 25℃

MAX. UNITS

-

ns

-

ns

-

ns

-

ns

Thermal Characteristics

PARAMETER

Thermal Resistance

(Channel-Ambience)

SYMBOL

Rth (ch-a)

CONDITIONS

Implement on a glass epoxy

resin PCB

MIN.

-

TYP. MAX. UNITS

62.5

-

℃/W

1476

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