XP133A1235SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

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componentes Descripción

Fabricante

XP133A1235SR

Power MOSFET

TOREX SEMICONDUCTOR 

◆N-Channel Power MOSFET

◆DMOS Structure

◆Low On-State Resistance : 0.035Ω(MAX.)

◆Ultra High-Speed Switching

◆SOP-8 Package

◆Two FET Devices Built-in

■APPLICATIONS

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■GENERAL DESCRIPTION

The XP133A1235SR is an N-channel Power MOSFET with low

on-state resistance and ultra high-speed switching

characteristics. Two FET devices are built into the one package

Because high-speed switching is possible, the IC can be

efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting

possible.

■FEATURES

Low On-State Resistance : Rds(on)=0.035Ω(Vgs= 4.5V)

: Rds(on)=0.048Ω(Vgs = 2.5V)

Ultra High-Speed Switching

Driving Voltage

: 2.5V

High Density Mounting : SOP-8

■PIN CONFIGURATION

■EQUIVALENT CIRCUIT

XP133A1235SR ETR1112_001.doc

■PIN ASSIGNMENT

PIN NUMBER

1

2

3

4

5~6

7~8

PIN NAME

S1

G1

S2

G2

D2

D1

FUNCTION

Source

Gate

Source

Gate

Drain

Drain

■ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Vdss

20

V

Gate-Source Voltage

Vgss ±12

V

Drain Current (DC)

Id

6

A

Drain Current (Pulse)

Idp

20

A

Reverse Drain Current

Idr

6

A

Channel Power Dissipation * Pd

2

W

Channel Temperature

Tch

150

℃

Storage Temperature Range Tstg -55~150 ℃

* When implemented on a glass epoxy PCB

1475

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