XP133A1235SR Ver la hoja de datos (PDF) - Unspecified

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XP133A1235SR

Power MOS FET

Unspecified 

XP133A1235SR

Power MOS FET

◆ N-Channel Power MOS FET

◆ DMOS Structure

◆ Low On-State Resistance : 0.035Ω (max)

◆ Ultra High-Speed Switching

◆ SOP - 8 Package

◆ Two FET Devices built-in

■ Applications

● Notebook PCs

● Cellular and portable phones

● On - board power supplies

● Li - ion battery systems

■ General Description

The XP133A1235SR is a N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Two FET devices are built into the one package.

Because high-speed switching is possible, the IC can be efficiently

set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

■ Features

Low on-state resistance : Rds (on) = 0.035Ω ( Vgs = 4.5V )

Rds (on) = 0.048Ω ( Vgs = 2.5V )

Ultra high-speed switching

Operational Voltage : 2.5V

High density mounting : SOP - 8

■ Pin Configuration

S1 1

G1 2

S2 3

G2 4

SOP - 8 Top View

8 D1

7 D1

6 D2

5 D2

■ Equivalent Circuit

1

8

2

7

3

6

4

5

N - Channel MOS FET

( 2 FET devices built-in )

■ Pin Assignment

PIN NUMBER PIN NAME

FUNCTION

u

1

S1

2

G1

Source

Gate

3

S2

Source

4

G2

5-6

D2

7-8

D1

Gate

Drain

Drain

■ Absolute Maximum Ratings

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Power Dissipation (note)

Channel Temperature

Storage Temperature

SYMBOL

Vdss

Vgss

Id

Idp

Idr

Pd

Tch

Tstg

RATINGS

20

+ 12

6

20

6

2

150

- 55 to 150

( note ) : When implemented on a glass epoxy PCB

Ta=25OC

UNITS

V

V

A

A

A

W

OC

OC

413

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