VTO175-16IO7 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
VTO175-16IO7 Datasheet PDF : 2 Pages
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VTO 110
VTO 175
Symbol
I ,I
RD
VF, VT
Test Conditions
V =V ;V =V
R
RRM D
DRM
T =T
VJ
VJM
TVJ = 25°C
IF, IT = 200 A, TVJ = 25°C
Characteristic Values
VTO 110 VTO 175
≤
5
mA
≤
0.3
mA
≤ 1.75
1.57
V
10
V
VG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VT0
For power-loss calculations only
rT
(TVJ = 125°C)
0.85
0.85
V
6
3.5 mΩ
1
3
2
6
5
V
V = 6 V; T = 25°C
GT
D
VJ
TVJ = -40°C
I
V = 6 V; T = 25°C
GT
D
VJ
TVJ = -40°C
≤
1.5
≤
1.6
≤
100
≤
200
VGD
IGD
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
≤
0.2
≤
5
IL
IG = 0.3 A; tG = 30 µs TVJ = 25°C ≤
450
diG/dt = 0.3 A/µs
V
V
mA
mA
V
mA
mA
1
4
IGD, TVJ = 125°C
0.1
1
10
100
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
1000 mA
IG
I
H
tgd
RthJC
RthJH
d
S
dA
a
T
VJ
=
25°C;
V
D
=
6
V;
R
GK
=
∞
TVJ = 25°C; VD = ½ VDRM
IG = 0.3 A; diG/dt = 0.3 A/µs
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
≤
200
≤
2
t 0.65
0.108
0.8
u 0.133
0.46
0.077
0.55
0.092
10
o 9.4
-50
mA
µs
K/W
K/W
K/W
K/W
mm
mm
m/s2
Fig. 1 Gate trigger characteristics
120
A
100
IdAV
VTO 110
80
60
40
e 20
s0
0
50
100 °C 150
a TC
Dimensions in mm (1 mm = 0.0394")
p hM6x12
900
A
800
IFSM
VTO 110
50 Hz
80% VRRM
Fig. 2 DC output current at case
temperature
0.7
K/W
0.6
ZthJC
VTO 110
700
TVJ = 45°C
0.5
600
0.4
94
80
500
72
26
26
0.3
400
TVJ = 125°C
0.2
300
C~
D~
E~
2.8 x 0.8
M6
A+
3
2
1
B-
4
5
6
12
7
25
66
200
0.1
100
10-3
10-2
10-1
100 s
t
Fig. 3 Surge overload current
0.0
101
10-3
10-2
10-1
100 s 101
t
Fig. 4 Transient thermal impedance
IFSM: Crest value, t: duration
junction to case (per leg)
IXYS reserves the right to change limits, test conditions and dimensions.
20080227a
© 2008 IXYS All rights reserved
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