DS2002SF17 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DS2002SF17

Rectifier Diode

Dynex Semiconductor 

DS2002SF

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRRM

Peak reverse current

QS

Total stored charge

IRR

Peak recovery current

V

Threshold voltage

TO

r

Slope resistance

T

Conditions

At 3400A peak, Tcase = 25oC

At VRRM, Tcase = 175oC

IF = 2000A, dIRR/dt = 3A/µs

Tcase = 175˚C, VR = 100V

At T = 175˚C

vj

At T = 175˚C

vj

Min. Max. Units

-

1.18

V

-

50 mA

- 1500 µC

-

90

A

-

0.74 V

- 0.088 mΩ

CURVES

8000

Measured under pulse conditions

6000

6000

Tj = 175˚C

5000

4000

4000

Tj = 25˚C

3000

2000

2000

1000

0

0

0.5

1.0

1.5

2.0

0

Instantaneous forward voltage, VF - (V)

Fig.2 Maximum (limit) forward characteristics

dc

Half wave

3 phase

6 phase

1000

2000

3000

4000

Mean forward current, IF(AV) - (A)

5000

Fig.3 Dissipation curves

VFM Equation:-

VFM = A + Bln (IF) + C.IF+D.√IF

Where

A = –0.64773

B = 0.268581

C = 0.00016

D = –0.01796

these values are valid for Tj = 125˚C for IF 500A to 8000A

4/7

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