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WFW13N50

Silicon N-Channel MOSFET

Shenzhen Winsemi Microelectronics Co., Ltd 

Features

■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V

■ Ultra-low Gate charge(Typical 43nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

WFW13N50

Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advancedplanar

stripe,DMOS technology.This latest technology has beenespecially

designed to minimize on-state resistance, have a high rugged

avalanche characteristics .This devices is specially wellsuited for

high efficiency switch model power supplies, power factor correction

and half bridge and full bridge resonant topology line a electronic

lamp ballast.

Absolute Maximum Ratings

Symbol

Parameter

VDSS

ID

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

EAS

Single Pulsed Avalanche Energy

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

PD

Derating Factor above 25℃

TJ,Tstg

Junction and Storage Temperature

TL

Channel Temperature

(Note1)

(Note2)

(Note1)

(Note3)

Value

500

13

8

52

±30

845

5

3.5

218

1.56

-55~150

300

Units

V

A

A

A

V

mJ

mJ

V/ ns

W

W/℃

℃

℃

Thermal Characteristics

Symbol

Parameter

RQJC

RQCS

RQJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Case-to-Sink

Thermal Resistance , Junction-to -Ambient

Value

Min Typ Max

Units

-

-

0.58

℃/W

-

0.5

-

℃/W

-

-

62.5

℃/W

Rev.A Jun.2011

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