TV2212FM Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

TV2212FM

Fast Recovery Diode

Dynex Semiconductor 

TV22..F

500

Measured under pulse conditions

400

300

Tj = 150˚C

200

Tj = 25˚C

100

0

0.95

10000

1000

100

1.05

1.15

1.25

1.35

1.45

Instantaneous forward voltage VF - (V)

Fig.2 Maximum (limit) forward characteristics

IF

∫ 50µs

QS = 0

QS

Conditions:

Tj = 125˚C,

VR = 100V

tp = 1ms

dIR/dt

IRR

IF = 2000A

IF = 1000A

IF = 500A

IF = 200A

IF = 100A

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.3 Recovered charge

4/7

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