TV2212FM Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
TV2212FM Datasheet PDF : 7 Pages
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TV22..F
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
5.0
kA
125 x 103 A2s
-
kA
-
A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R
th(j-c)
Rth(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
T
Storage temperature range
stg
-
Mounting torque
Conditions
dc
Mounting torque 35.0Nm
with mounting compound
On-state (conducting)
Min. Max. Units
-
0.16 oC/W
-
0.06 oC/W
-
150
oC
-55 175
oC
30.0 35.0 Nm
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRRM
Peak reverse current
t
rr
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
Reverse recovery current
RM
K
Soft factor
VTO
rT
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 750A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
IF = 750A, diRR/dt = 100A/µs
Tcase = 125oC, VR = 100V
At Tvj = 150oC
At T = 150oC
vj
di/dt
=
1000A/µs,
T
j
=
125oC
Typ. Max. Units
-
1.6
V
-
40 mA
-
3.2 µs
-
70
µC
-
43
A
1.8
-
-
-
1.0
V
-
0.8 mΩ
-
-
V
2/7
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