MP03TT300-15W4 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
MP03TT300-15W4 Datasheet PDF : 10 Pages
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MP03TT300
1600
20
Measured under pulse conditions
1400
I2t = Î2 x t
2
1200
15
300
1000
Tj = 125˚C
800
10
250
600
400
200
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, VT - (V)
Fig. 3 Maximum (limit) on-state characteristics
5
I2t
200
0
150
1
10 1 2 3 4 5
50
ms
Cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% VRSM at Tcase = 125˚C)
100
1.0
Pulse width Frequency Hz Table gives pulse power PGM in Watts
µs 50 100 400
20 100 100 100
25 100 100 100
100 100 100 100
500 100 100 25
10
1ms
10ms
100 50 12.5
10 - -
0.1
Upper limit 95%
1
VGD
Lower limit 5%
Region of
certain triggering
0.1
0.001
0.01
0.1
1
10
Gate trigger current, IGT - (A)
Fig. 5 Gate characteristics
0.01
0.001
0.001 0.01
0.1
1
10
Time - (s)
100 1000
Fig. 6 Transient thermal impedance - dc
4/10
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