VN5010AK-E Ver la hoja de datos (PDF) - STMicroelectronics
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VN5010AK-E Datasheet PDF : 31 Pages
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VN5010AK-E
Electrical specifications
Table 6.
Symbol
Power section (continued)
Parameter
Test conditions
IL(off)
VF
Off-state output
current
Output - VCC diode
voltage
VIN=VOUT=0V; VCC= 13V; Tj= 25°C
VIN=VOUT=0V; VCC= 13V; Tj= 125°C
-IOUT= 10A; Tj= 150°C
1. PowerMOS leakage included.
Min. Typ. Max. Unit
0 0.01 3
µA
0
5
0.7 V
Table 7. Switching (VCC=13V)
Symbol
Parameter
Test conditions
td(on)
Turn-on delay time
td(off)
Turn-off delay time
(dVOUT/dt)on
Turn-on voltage
slope
(dVOUT/dt)off
Turn-off voltage
slope
WON
WOFF
Switching energy
losses during twon
Switching energy
losses during twoff
RL= 2.6Ω (see Figure 8)
RL= 2.6Ω (see Figure 8)
RL= 2.6Ω
RL= 2.6Ω
RL= 2.6Ω (see Figure 8)
RL= 2.6Ω (see Figure 8)
Min. Typ. Max. Unit
-
35
-
µs
-
65
-
-
See
Figure 20
-
-
See
Figure 22
-
µs
V/µs
V/µs
-
1.5
-
mJ
-
0.8
-
mJ
Table 8.
Symbol
Logic input
Parameter
VIL
IIL
VIH
IIH
VI(hyst)
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
VICL Input clamp voltage
VCSDL CS_DIS low level voltage
ICSDL Low level CS_DIS current
VCSDH CS_DIS high level voltage
ICSDH High level CS_DIS current
VCSD(hyst) CS_DIS hysteresis voltage
VCSCL CS_DIS clamp voltage
Test conditions
VIN= 0.9V
VIN= 2.1V
IIN= 1mA
IIN= -1mA
VCSD= 0.9V
VCSD= 2.1V
ICSD= 1mA
ICSD= -1mA
Min. Typ. Max. Unit
0.9 V
1
µA
2.1
V
10 µA
0.25
V
5.5
7
V
-0.7
V
0.9 V
1
µA
2.1
V
10 µA
0.25
V
5.5
7
V
-0.7
V
Doc ID 13218 Rev 7
9/31
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