LMA110B Ver la hoja de datos (PDF) - Filtronic PLC
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LMA110B Datasheet PDF : 4 Pages
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Filtronic
Solid State
.5-8GHz MESFET Amplifier
LMA110B
Features
• 3.5dB Typical Noise Figure
• 12.5dB Typical Gain
• 12dBm Saturated Output Power
• 12dB Input/Output Return Loss Typical
• 0.5-6GHz Frequency Bandwidth
• +8 Volts Single Bias Supply
• DC Decoupled RF Input and Output
• Chip Size : 1.62mmX1.62mm (.064”X.064”)
• Chip Thickness : 100µm
• Pad Dimension : 100µm2
Description
The Filtronic LMA110B is a GaAs monolithic distributive amplifier which operates from 0.5 to 8 GHz. This amplifier produces a typical gain of
12.5dB with a noise figure of 3.5dB. The LMA110B is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC
decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications at Ta=25°C
(VDD=+8.0V, Zin=Zout=50Ω)
Symbol
BW
S21
Ids
∆S21
NF
RLin
RLout
S12
P-1dB
Parameter
Operating Bandwidth
Small Signal Gain
Drain Operating Current
Small Signal Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
1-dB Gain Compression Power
Test Conditions
VD=8V, Vg1=Vg2=8V
@ 50% Idss
Limit
Min.
Typ.
Max.
0.5
8
11
12.5
60
85
110
±1
±1.5
3.5
4.5
-10
-8
-10
-8
-30
8
10
Units
GHz
dB
mA
dB
dB
dB
dB
dB
dBm
Absolute Maximum Ratings
Symbol
Vdd
Idd
Pin
Pt
Tch
Tstg
Tmax.
Parameter/Conditions
Min.
Drain Supply Voltage
Total Drain Current
RF Input Power
Power Dissipation
Operating Channel Temperature
Storage Temperature
-65
Max. Assembly Temp.
(1 min. max.)
Max.
13
110
24
1.5
150
165
300
Units
Volts
mA
dBm
W
°C
°C
°C
Notes :
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
Phone: (408) 988-1845
DSS 005 WD
Internet: http://www.FiltronicSolidState.com
Fax: (408) 970-9950
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