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Número de pieza
componentes Descripción
TK12A60U Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TK12A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Toshiba
TK12A60U Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
1.2
Common source
VGS
=
10 V
1
Pulse test
0.8
12
0.6
6
0.4
ID
=
3 A
0.2
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
TK12A60U
100
Common source
Tc
=
25°C
Pulse test
I
DR
−
V
DS
10
10
1
5
3
1
VGS
=
0 V
0.1
0
−
0.3
−
0.6
−
0.9
−
1.2
Drain
−
source voltage V
DS
(V)
10000
C – V
DS
1000
100
Ciss
Coss
10
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
Drain
−
source voltage V
DS
(V)
V
th
−
Tc
5
4
3
2
Common source
1
VDS
=
10 V
ID
=
1 mA
Pulse test
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
−
Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
500
VDS
400
300
200
100
Dynamic input/output
characteristics
Common source
20
ID
=
12 A
Tc
=
25°C
Pulse test
16
200
12
VDD
=
100V
400
8
VGS
4
0
0
0
4
8
12
16
20
Total gate charge Q
g
(nC)
4
2010-11-02
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