TA2020-020 Ver la hoja de datos (PDF) - Tripath Technology Inc.
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Fabricante
TA2020-020
Tripath Technology Inc.
TA2020-020 Datasheet PDF : 13 Pages
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TECHNICAL INFORMATION
B
Electrical Characteristics (Note 1, 2)
See Test/Application Circuit. Unless otherwise specified, VDD = 13.5V, f = 1kHz, Measurement
Bandwidth = 22kHz, RL = 4Ω, TA = 25 °C.
SYMBOL
PARAMETER
PO
Output Power
(Continuous Average/Channel)
IDD,MUTE
IDD, SLEEP
Iq
THD + N
IHF-IM
SNR
CS
PSRR
η
VOFFSET
VOH
VOL
eOUT
Mute Supply Current
Sleep Supply Current
Quiescent Current
Total Harmonic Distortion Plus
Noise
IHF Intermodulation Distortion
Signal-to-Noise Ratio
Channel Separation
Power Supply Rejection Ratio
Power Efficiency
Output Offset Voltage
High-level output voltage
(FAULT & OVERLOADB)
Low-level output voltage
(FAULT & OVERLOADB)
Output Noise Voltage
CONDITIONS
THD+N = 0.1%
THD+N = 10%
MUTE = VIH
RL = 4Ω
RL = 8Ω
RL = 4Ω
RL = 8Ω
SLEEP = VIH
VIN = 0 V
PO = 10W/Channel
19kHz, 20kHz, 1:1 (IHF)
A-Weighted, POUT = 1W, RL = 8Ω
0dBr = 1W, RL = 4Ω, f = kHz
Vripple = 100mV
POUT = 12W/Channel, RL = 8Ω
No Load, MUTE = Logic low
A-Weighted, input AC grounded
MIN.
74
60
3.5
TYP.
13
8
22
12
5.5
0.25
60
0.03
0.18
89
80
80
88
50
100
MAX.
7
2
UNITS
W
W
W
W
mA
mA
mA
%
%
dB
dB
dB
%
150 mV
V
1
V
µV
Notes:
1) Minimum and maximum limits are guaranteed but may not be 100% tested.
2) For operation in ambient temperatures greater than 25°C, the device must be derated based on
the maximum junction temperature and the thermal resistance determined by the mounting
technique.
TA2020-020, Rev. 4.0, 09.00
3 of 13
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