T830-XXXW Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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T830-XXXW Datasheet PDF : 5 Pages
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Fig. 1: Maximum power dissipation versus RMS
on-state current.
T820-xxxW / T830-xxxW
Fig. 2: Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
10
180 O
o
= 180
8
o
= 120
o
6
= 90
o
= 60
4
= 30 o
2
I T(RMS) (A)
0
0
1
2
3
4
5
6
7
8
Fig. 3: RMS on-state current versus case temper-
ature.
P (W)
10
Tcase (oC)
-90
-95
8
-100
6 Rth = 0 o C/W
2.5 o C/W
5o C/W
4
7.5 o C/W
-105
-110
2
Tamb (oC)
-115
-120
0
-125
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 4: Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
I T(RMS)(A)
10
8
= 180o
6
4
2
Tcase(oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8
Igt
1.6
1.4
Ih
1.2
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Zth/Rth
1
Zth(j-c)
0.1
0.01
Zth(j-a)
1E-3
1E-2
1E-1 1E+0 1E+1
tp(s)
1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
100
80
Tj initial = 25oC
60
40
20
Number of cycles
0
1
10
100
1000
3/5
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