T830-700W Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

T830-700W

SNUBBERLESS TRIAC

STMicroelectronics 

T820-xxxW / T830-xxxW

THERMAL RESISTANCES

Symbol

Rth(j-a)

Rth(j-c)

Parameter

Junction to ambient

Junction to case for A.C (360° conduction angle)

Value

50

3.1

Unit

°C/W

°C/W

GATE CHARACTERISTICS (maximum values)

PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Quadrant

T820 T830 Unit

IGT

VD=12V (DC) RL=33Ω

VGT

VD=12V (DC) RL=33Ω

Tj= 25°C I-II-III MAX 20

30

mA

Tj= 25°C I-II-III MAX

1.5

V

VGD

VD=VDRM RL=3.3kΩ

Tj= 125°C I-II-III MIN

0.2

V

tgt

VD=VDRM IG =500mA

Tj= 25°C I-II-III TYP

2

µs

dlG/dt= 3Aµs

IH *

VTM *

IT= 100mA Gate open

ITM= 11A tp= 380µs

Tj= 25°C

Tj= 25°C

MAX 35

50

MAX

1.5

V

IDRM

IRRM

VDRM rated

VRRM rated

Tj= 25°C

Tj= 125°C

MAX

10

µA

MAX

2

mA

dV/dt *

Linear slope up to

VD=67%VDRM Gate open

Tj= 125°C

MIN 200 300 V/µs

(dV/dt)c * (dI/dt)c = 4.5 A/ms (see note) Tj= 125°C

MIN 10

20 V/µs

* For either polarity of electrode A2 voltage with reference to electrode A1.

Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use

a snuber R-C network accross T820W / T830W triacs.

2/5

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