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T830-700W Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
T830-700W
ST-Microelectronics
STMicroelectronics ST-Microelectronics
T830-700W Datasheet PDF : 5 Pages
1 2 3 4 5
T820-xxxW
®
T830-xxxW
SNUBBERLESS TRIAC
FEATURES
s ITRMS = 8 A
s VDRM = VRRM = 600V to 800V
s EXCELLENT SWITCHING PERFORMANCES
s INSULATING VOLTAGE = 1500V(RMS)
s U.L. RECOGNIZED : E81734
A2
A1
G
DESCRIPTION
The T820/830W triacs use high performance glass
passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
G
A2
A1
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
IT(RMS)
RMS on-state current
(360° conduction angle)
Tc= 95°C
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
I2t
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
tp = 10 ms
dI/dt Critical rate of rise of on-state current
Repetitive
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
F = 50 Hz
Non Repetitive
Tstg
Storage temperature range
Tj
Operating junction temperature range
Tl
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
Value
8
88
100
50
20
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
T820 / T830-xxxW
Unit
600
700
800
600
700
800
V
September 2001 - Ed: 1A
1/5

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