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T2500 Datasheet PDF : 4 Pages
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T2500 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
RθJC
2.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current
(Rated VDRM, Gate Open,TJ = 100°C)
Maximum On-State Voltage (Either Direction)*
(IT = 30 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 12 Ohms)
(VD = VDROM, RL = 125 Ohms, TC = 100°C)
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 150 mA)
Gate Controlled Turn-On Time
(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs)
Critical Rate-of-Rise of Commutation Voltage
(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms,
Gate Unenergized, TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage
(Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
T2500B
T2500D,M,N
p p *Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Symbol
IDRM
VTM
IGT
VGT
IH
tgt
dv/dt(c)
dv/dt
Min
Typ
Max
Unit
—
—
2
mA
—
—
2
Volts
mA
—
10
25
—
20
60
—
15
25
—
30
60
Volts
—
1.25
2.5
0.2
—
—
—
15
30
mA
—
1.6
—
µs
—
10
—
V/µs
V/µs
—
100
—
—
75
—
QUADRANT DEFINITIONS
MT2(+)
QUADRANT II
QUADRANT I
MT2(+), G(–)
MT2(+), G(+)
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
G(–)
G(+)
QUADRANT III
QUADRANT IV
MT2(–), G(–)
MT2(–), G(+)
MT2(–)
USAGE
PART NUMBER
VS
IS
VS1 – VS2
Temperature
Coefficient
General
MBS4991
MBS4992
6.0 – 10 V
7.5 – 9.0 V
350 µA Max 120 µA Max
0.5 V Max
0.2 V Max
0.02%/°C Typ
See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.
2
Motorola Thyristor Device Data
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