SVD2N60T Ver la hoja de datos (PDF) - Silan Microelectronics
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SVD2N60T Datasheet PDF : 6 Pages
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SVD2N60T
2A, 600V N-Channel MOSFET
GENERAL DESCRIPTION
SVD2N60T is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary S-
RinTM structure DMOS technology. The improved planar stripe cell
and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
2
1
3
1.Gate 2.Drain 3.Source
123
TO-220-3L
ORDERING SPECIFICATIONS
Part No.
SVD2N60T
Package
TO-220-3L
Marking
SVD2N60T
Shipping
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
EAR
TJ
Tstg
Value
600
±30
2.0
8
44
0.22
120
5.4
-55̚+150
-55̚+150
Unit
V
V
A
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 1 of 6
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