2NK100Z(2008) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

2NK100Z
(Rev.:2008)

N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

Figure 14. Source-drain diode forward

characteristics

STD2NK100Z - STP2NK100Z - STU2NK100Z

Figure 15. Maximum avalanche energy vs

temperature

EAS(mJ)

190

180

170

160

150

140

130

120

110

100

90

80

70

60

50

40

30

20

10

ID=1.85A

AM00056v1

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TJ(°C)

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