2NK100Z(2008) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

2NK100Z
(Rev.:2008)

N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STD2NK100Z

STP2NK100Z - STU2NK100Z

N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK

Zener-protected SuperMESH™ Power MOSFET

Features

Type

STD2NK100Z

STP2NK100Z

STU2NK100Z

VDSS

RDS(on)

max

ID

PTOT

1000 V

1000 V

1000 V

< 8.5 Ω

< 8.5 Ω

< 8.5 Ω

1.85 A

1.85 A

1.85 A

70 W

70 W

70 W

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Application

■ Switching applications

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down,

specialties is taken to ensure a very good dv/dt

capability for the most demanding application.

Such series complements ST full range of high

voltage Power MOSFETs.

3

2

1

TO-220

3

2

1

IPAK

3

1

DPAK

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

STD2NK100Z

STP2NK100Z

STU2NK100Z

Marking

2NK100Z

2NK100Z

2NK100Z

Package

DPAK

TO-220

IPAK

Packaging

Tape and reel

Tube

Tube

June 2008

Rev 2

1/16

www.st.com

16

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