28F016XS Ver la hoja de datos (PDF) - Intel
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28F016XS Datasheet PDF : 54 Pages
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E
28F016XS FLASH MEMORY
5.9 AC Characteristics for CEX#—Controlled Write Operations(1) (Continued)
VCC = 5.0V ± 5%, TA = 0°C to +70°C
Versions
28F016XS-15
28F016XS-20
Symbol
Parameter
Notes Min Typ Max Min Typ Max Unit
tAVAV
Write Cycle Time
60
60
ns
tVPEH1,2 VPP Setup to CEX# Going
3,7 100
100
ns
High
tPHWL
RP# Setup to WE# Going
3
300
300
ns
Low
tWLEL
WE# Setup to CEX# Going
3,7
0
Low
0
ns
tAVEH
Address Setup to CEX#
2,6,7 45
45
ns
Going High
tDVEH
Data Setup to CEX# Going
2,6,7
45
45
ns
High
tELEH
CEX# Pulse Width
7
50
50
ns
tEHDX
Data Hold from CEX# High
2,7
0
0
ns
tEHAX
Address Hold from CEX#
High
2,7
5
5
ns
tEHWH
WE hold from CEX# High
3,7
5
5
ns
tEHEL
CEX# Pulse Width High
7
15
15
ns
tGHEL
Read Recovery before
Write
3
0
0
ns
tEHRL
CEX# High to RY/BY#
3,7
Going Low
100
100 ns
tRHPL
RP# Hold from Valid Status
3
0
Register (CSR, GSR, BSR)
Data and RY/BY# High
0
ns
tPHEL
RP# High Recovery to
3,7 300
300
ns
CEX# Going Low
tEHCH
Write Recovery before
20
20
ns
Read
tQVVL1,2 VPP Hold from Valid Status
3
0
Register (CSR, GSR, BSR)
Data and RY/BY# High
0
µs
tEHQV1
Duration of Program
Operation
3,4,5,8 4.5 6 TBD 4.5 6 TBD µs
tEHQV2
Duration of Block Erase
Operation
3,4
0.6 1.2 20 0.6 1.2 20 sec
45
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