28F016XS Ver la hoja de datos (PDF) - Intel
Número de pieza
componentes Descripción
Fabricante
28F016XS Datasheet PDF : 54 Pages
| |||
E
28F016XS FLASH MEMORY
5.8 AC Characteristics for WE#—Controlled Write Operations(1) (Continued)
VCC = 5.0V ± 5%, TA = 0°C to +70°C
Versions
28F016XS-15
28F016XS-20
Symbol
Parameter
Notes Min Typ Max Min Typ Max Unit
tAVAV
Write Cycle Time
65
65
ns
tVPWH1,2 VPP Setup to WE# Going
3
100
100
ns
High
tPHEL
RP# Setup to CEX# Going
3,7 300
300
ns
Low
tELWL
CEX# Setup to WE# Going
3,7
0
Low
0
ns
tAVWH
Address Setup to WE#
2,6
50
50
ns
Going High
tDVWH
Data Setup to WE# Going
2,6
50
50
ns
High
tWLWH
WE# Pulse Width
50
50
ns
tWHDX
Data Hold from WE# High
2
0
0
ns
tWHAX
Address Hold from WE#
High
2
5
5
ns
tWHEH
CEX# hold from WE# High
3,7
5
5
ns
tWHWL
WE# Pulse Width High
15
15
ns
tGHWL
Read Recovery before
Write
3
0
0
ns
tWHRL
WE# High to RY/BY#
3
Going Low
100
100 ns
tRHPL
RP# Hold from Valid
Status Register (CSR,
GSR, BSR) data and
RY/BY# High
3
0
0
ns
tPHWL
RP# High Recovery to
3
300
300
ns
WE# Going Low
tWHCH
Write Recovery before
20
20
ns
Read
tQVVL1,2 VPP Hold from Valid Status
3
0
Register (CSR, GSR, BSR)
Data and RY/BY# High
0
µs
tWHQV1
Duration of Program
Operation
3,4, 4.5 6 TBD 4.5 6 TBD µs
5,8
tWHQV2
Duration of Block Erase
Operation
3,4 0.6 1.2 20 0.6 1.2 20 sec
41
Share Link: 