28F016XS-20 Ver la hoja de datos (PDF) - Intel

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28F016XS-20

16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

Intel 

E

28F016XS FLASH MEMORY

5.4 DC Characteristics (Continued)

VCC = 3.3V ± 5%, TA = 0°C to +70°C

3/5# = Pin Set High for 3.3V Operations

Symbol

Parameter

Notes Min Typ Max Units

Test Conditions

VPPLK

VPP

Erase/Program

Lock Voltage

3,6 0.0

1.5

V

VPPH1

VPP during

Program/Erase

Operations

3

4.5 5.0 5.5

V

VPPH2

VPP during

Program/Erase

Operations

3

11.4 12.0 12.6 V

VLKO

VCC

2.0

V

Erase/Program

Lock Voltage

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3V, VPP = 12.0V or 5.0V, T = +25°C. These

currents are valid for all product versions (package and speeds).

2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of

ICCES and ICCR.

3. Block erases, programs and lock block operations are inhibited when VPP ≤ VPPLK and not guaranteed in the ranges

between VPPLK(max) and VPPH1(min), between VPPH1 (max) and VPPH2(min) and above VPPH2(max).

4. Automatic Power Savings (APS) reduces ICCR to 3 mA typical in static operation.

5. CMOS Inputs are either VCC ± 0.2V or GND ± 0.2V. TTL Inputs are either VIL or VIH.

6. Sampled, but not 100% tested. Guaranteed by design.

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