ST180S Series
Bulletin I25165 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
04
08
ST180S
12
16
20
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
400
800
1200
1600
2000
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
1700
2100
IDRM/IRRM max.
@ TJ = TJ max
mA
30
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2√t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Max. (typical) latching current
ST180S
200
85
314
5000
5230
4200
4400
125
114
88
81
1250
1.08
1.14
Units Conditions
A 180° conduction, half sine wave
°C
A DC @ 76°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2√s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms
t = 8.3ms
100% VRRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
1.18
1.14
1.75
600
1000 (300)
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I > π x IT(AV)),TJ = TJ max.
V
Ipk= 570A, TJ = 125°C, tp = 10ms sine pulse
mA TJ = TJ max, anode supply 12V resistive load
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
ST180S
1000
1.0
100
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
2
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