SS559(2012) Ver la hoja de datos (PDF) - SEC Electronics Inc.
Número de pieza
componentes Descripción
Fabricante
SS559 Datasheet PDF : 8 Pages
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SS559
Hall Latch - High Sensitivity
Magnetic Specifications
DC Operating Parameters VDD = 2.5V to 24V (unless otherwise specified)
SS559
Parameter
Symbol
Test Conditions
Min Typ
Operating Point BOP
15 30
Release Point
B RP
E spec., TA = 85°C -45 -30
Hysteresis
B HYST
60
Operating Point BOP
15 30
Release Point
B RP
K spec., TA = 125°C -50 -30
Hysteresis
B HYST
60
Operating Point BOP
10 30
Release Point
B RP
L spec., TA = 150°C -55 -30
Hysteresis
B HYST
60
Table 4: Magnetic Specifications
Max
45
-15
50
-15
55
-10
Units
G
G
G
G
G
G
G
G
G
Detailed General Description
The SS559 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to
operate properly.
The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds
the operate point threshold, BOP. After turn-on, the output voltage is VDSon. Note that the device latches, that is, a south
pole of sufficient strength towards the branded surface of the device turns the device on. The device remains on if the
south pole is removed (B→0). This latching property defines the device as a magnetic memory.
When the magnetic field is reduced below the release point, BRP, the OUT pin turns off (goes high). The difference in
the magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents
output oscillation near the switching point, and allows clean switching of the output even in the presence of external
mechanical vibration and electrical noise.
The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means
magnetic fields with equivalent strength and opposite direction drive the output high and low.
Powering-on the device in the hysteresis region (less than BOP and higher than BRP) allows an indeterminate output
state. The correct state is attained after the first excursion beyond BOP or BRP.
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on in the presence
of a sufficiently strong North pole magnetic field applied to the marked face.
Output level
OUT = High
B HYS
Output level
OUT = High
B HYS
B RP
-30Gs typ
OUT = Low
0mT
B OP
30Gs typ
Flux density
UA package - Latch characteristic
B RP
-30Gs typ
OUT = Low
0mT
B OP
30Gs typ
Flux density
SE package - Latch characteristic
4
V2.10 May 1, 2012
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