SPU30N03L Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

SPU30N03L

SIPMOS® Power Transistor

Siemens AG 

SPD30N03L

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

VDD = 24 V, ID = 30 A

Gate to drain charge

VDD = 24 V, ID = 30 A

Gate charge total

VDD = 24 V, ID = 30 A, VGS = 0 to 10 V

Gate plateau voltage

VDD = 24 V, ID = 30 A

Qgs

-

Qgd

-

Qg

-

V(plateau)

-

4

6 nC

21 31.5

54 80

3.31 - V

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 °C

-

-

30 A

Inverse diode direct current,pulsed

TC = 25 °C

ISM

-

-

120

Inverse diode forward voltage

VGS = 0 V, IF = 60 A

Reverse recovery time

VR = 15 V, IF=IS , diF/dt = 100 A/µs

VSD

- 0.97 1.7 V

trr

-

45 68 ns

Reverse recovery charge

VR = 15 V, IF=lS , diF/dt = 100 A/µs

Qrr

- 0.045 0.068 µC

Semiconductor Group

4

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